R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

Va'aiga lautele o Thyristor Tape-Tape Anapogi (GTO)

Ose Thyristor Tele vave tape, e masani ona taʻua o le Gate Turn-Off Thyristor (GTO), o se ituaiga masini semiconductor e mafai ona ki ma tape e lona faitotoa faailo. E le pei o thyristors masani, lea e mafai ona na'o se faailo o le faitotoa ma tape e ala i le faʻaitiitia o le taimi nei o loʻo tafe atu ia i latou i lalo ifo o se tulaga faʻapitoa. (taofiofi a'o), GTOs e mafai ona tapē malosi e ala i le faʻaogaina o le paʻu o le faitotoa le lelei. O lenei gafatia e mafai ai ona sili atu le saʻo o le puleaina o le suiga o le masini.
O GTO e fa'aaogaina i fa'aoga maualuga e pei o ta'avale afi, sapalai eletise, ma inverters, lea latou te faafaigofieina ai le fesuia'iina vave ma le pulea o au tetele. Latou te fa'agaoioia i le maualuga o galu ma voltage nai lo le tele o isi ituaiga o transistor, faia ia talafeagai mo galuega mamafa tau alamanuia ma pisinisi.

Ituaiga o le Saosaoa Turn-Off Thyristor (GTO)

Malosiaga Turn-off Mafai: E mafai ona tapeina e ala i le fa'aogaina o le pa'u o le faitotoa le lelei, tu'uina atu sili atu le pulea i le fesuia'iga.
Pulea Maualuga: Mafai ona pulea tulaga maualuga o le mana, fa'atasi ai ma fua fa'atatau e masani ona sili atu nai lo o fa'ailoga o thyristors masani.
Suiga vave: Fuafuaina mo taimi vave ki ma tape taimi, mafai ai ona fa'agaioiga lelei i fa'aliliuga eletise.
Malosiaga Tele i le taimi nei: Mafai ona taulimaina au taua, fa'apena lelei mo talosaga e mana'omia ai le tele o le eletise.
Malosi maualuga faapalepale: E mafai ona tatalia voltage maualuga, fesoasoani i lo latou fa'atuatuaina i si'osi'omaga faigata.
Ma'a'alalo Ile-Setete Voltage Pa'u: Fa'aiti'itia le paoa pe a fa'atino, fa'aleleia atili le lelei atoatoa.
Faitotoa Avetaavale Manaoga: E mana'omia le fa'ata'atiaga lelei o ta'avale ta'avale faitoto'a ina ia mautinoa le fa'atuatuaina o le fa'aogaina ma le tapeina.
Li'o Pulea Lavelave: Ona o le manaʻomia o pulusi faitotoa lelei ma le leaga, pulea circuitry e mafai ona sili atu faigata pe a faatusatusa i thyristors faigofie.
Snubber Circuit: E masani ona mana'omia ni ta'amilosaga snubber e puipuia ai mai le fa'aoso eletise i le taimi e sui ai.
Pulea vevela: O le fa'amama lelei o le vevela e taua tele ona o le maualuga o le malosi o lo'o a'afia ai.

(R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor)

Specification of R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

The R0830LS12E, R0830LS12F, and R0830LS12X are high-performance rapid turn-off thyristors created for requiring power electronics applications. These dispersed entrance thyristors integrate durable current-handling capacities with rapid changing performance, making them suitable for high-frequency, high-power circuits. With a repeated peak reverse voltage (VRRM) of 1200V and a typical on-state existing (ITAV) score of 830A, these devices are engineered to handle hefty tons while keeping security and effectiveness.

Trick specs consist of a reduced gate trigger existing (IGT) of 200mA (common) and an entrance trigger voltage (VGT) of 3V (max), guaranteeing dependable and precise changing control. The distributed gateway framework enhances turn-on harmony, minimizing hot-spot threats and enhancing general gadget reliability. The rapid turn-off time (tq) o 14 microseconds (max) decreases switching losses, allowing efficient operation in high-frequency inverters, ta'avale afi eletise, and pulsed power systems.

These thyristors feature a sturdy press-fit or stud-mounted bundle designed for ideal thermal monitoring, with a maximum joint temperature level (Tj) o 125 °C. Thermal resistance (Rthjc) is kept reduced at 0.08 ° C/W, making certain effective warm dissipation under continuous procedure. Rise existing ability (I ² t)of 400kA ² s allows the gadgets to hold up against short-circuit conditions, improving system durability.

The R0830LS12 series is enhanced for applications calling for rapid switching and high dependability, such as commercial motor controls, renewable energy converters, faiga UPS, ma masini uelo. The distributed gate style makes certain even present circulation throughout turn-on, lowering anxiety on the silicon framework and prolonging operational life-span.

Distinctions in between the E, F, and X versions lie in tailored performance parameters. For example, the R0830LS12X (-14 x) alternative emphasizes ultra-fast turn-off for applications calling for very little delay times. All models abide by sector requirements for voltage and existing rankings, with extensive testing for surge strength, thermal biking, and long-lasting security.

These thyristors are ideal for designers seeking an equilibrium between high-power handling and quick changing in compact, robust bundles. Their design focuses on ease of integration into existing systems while supplying constant performance in harsh environments. With reduced leakage currents and high dv/dt ratings, the R0830LS12 series makes certain trustworthy operation in high-noise industrial setups.

(R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor)

Applications of R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

The R0830LS12E, R0830LS12F, and R0830LS12X are high-performance fast turn-off thyristors developed for requiring industrial and power electronics applications. These gadgets belong to a series of dispersed gate thyristors rated for 830A ahead existing and 1200V blocking voltage, making them ideal for high-power switching circumstances. Their sophisticated style makes sure quick changing, boosted thermal administration, and durable performance in high-stress settings.

A crucial function of these thyristors is their ** fast turn-off capability **, with a turn-off time of 14 microseconds (-14 x), considerably lowering changing losses and enhancing system effectiveness. This makes them ideal for high-frequency applications such as motor drives, fesuia'i, and pulsed power systems. O le ** dispersed gate modern technology ** guarantees consistent triggering across the thyristor’s surface area, boosting turn-on dependability and minimizing local heating. This layout additionally enhances dynamic security, also under high di/dt and dv/dt problems, extending functional life expectancy.

These thyristors excel in applications requiring exact control and high integrity. Typical usage instances consist of commercial motor controllers, faiga malosi fa'afouina (wind and solar inverters), grip systems for electric automobiles, and HVDC power transmission. Their 1200V voltage rating and 830A present capability permit them to take care of extreme tons, while maximized thermal attributes make sure efficient warmth dissipation, essential for constant procedure.

The R0830LS12 collection is engineered for durability, with reduced thermal resistance and robust building and construction to withstand voltage spikes and temperature level variations. This makes them suitable for rough settings such as heavy machinery, grid infrastructure, and transport systems. E lē gata i lea, their compatibility with modern-day vehicle driver circuits streamlines assimilation right into existing layouts.

Industries leveraging these thyristors benefit from decreased energy losses, higher power density, and enhanced system reliability. Whether in clever grids, commercial automation, or renewable energy jobs, the R0830LS12E, R0830LS12F, and R0830LS12X provide the performance required to satisfy today’s effectiveness and sustainability needs. Their combination of rapid switching, high power handling, and thermal strength placements them as critical elements in next-generation power electronic devices options.

Fa'amatalaga a le Kamupani

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) o se tasi o atinaʻe taʻutaʻua i tekonolosi eletise eletise ma oloa eletise, lea o lo'o a'afia atoatoa ile atina'eina ole la inverters， transformers, faatonutonu eletise, kapoti tufatufa, thyristors， modules， diodes， mea fa'avevela, ma isi masini faaeletonika po o semiconductor. O le a matou tuuto atu i le tuʻuina atu o tagata faʻaoga i tulaga maualuga, oloa lelei ma auaunaga magafagafa.

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utaina

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Tulaga Teuteu

1) Teu i se si'osi'omaga mago ile vevela ole potu.

2) Aloese mai le susu ma le maualuga o le vevela.

3) Fa'aoga vave pe a uma ona tatala le ato fa'apipi'i totonu.

5 FAQs of R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

What are the R0830LS12E, R0830LS12F, and R0830LS12X thyristors? These are high-power fast turn-off thyristors designed for high-voltage, high-current applications. They feature a 1200V blocking voltage, 830A average current rating, and a distributed gate structure for optimized switching performance. O le “14x fast turn-off” designation indicates rapid switching capabilities, making them suitable for circuits requiring precise control, such as inverters, ta'avale afi, or pulsed power systems. The models share core specifications but may differ in minor parameters like gate triggering requirements or thermal performance.

How does the distributed gate design improve performance? The distributed gate architecture ensures uniform triggering across the thyristor’s semiconductor area, reducing turn-on time and minimizing localized hot spots. This enhances reliability under high-stress conditions, improves switching efficiency, and supports higher frequency operation compared to conventional thyristors. It also contributes to lower power losses during switching transitions.

What is the significance of the “14x fast turn-off” feature? The term “14x” refers to the thyristor’s ultra-fast turn-off capability, which is critical for reducing switching losses and enabling operation in high-frequency circuits. This allows the device to handle rapid transitions between on and off states, making it ideal for applications like DC-AC converters or snubberless designs where minimizing heat generation and improving system efficiency are priorities.

What are the current and voltage limits for these thyristors? These devices are rated for 830A average current and 1200V repetitive peak off-state voltage. They can handle surge currents significantly higher than the average rating for short durations. Peitai, derating guidelines must be followed based on temperature, cooling conditions, and duty cycle to ensure longevity. Always consult the datasheet for absolute maximum ratings and thermal management requirements.

In what applications are these thyristors commonly used? Their high current-voltage capacity and fast switching make them ideal for industrial power electronics, including traction systems, induction heating, faiga UPS, and renewable energy inverters. They are also used in pulsed power setups, such as laser drivers or medical equipment, where precise, high-energy pulses are required. The robust design suits harsh environments with elevated temperatures or electrical noise.

(R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor)