electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

جو جائزوThyristor ماڊلز

Thyristor ماڊلز پاور اليڪٽرانڪس ٽيڪنالاجي ۾ اهم جزا آهن. اهي هڪ يا وڌيڪ thyristors تي مشتمل هوندا آهن جيڪي ٺهيل هائوسنگ ۾ ڍڪيل آهن. ٿائرسٽس چار پرت وارا آهن, ٽي ٽرمينل سيمي ڪنڊڪٽر ڊوائيس جيڪي بنيادي طور تي ايپليڪيشنن ۾ استعمال ڪيا ويندا آهن جيڪي ڪنٽرول ۽ ضابطو ڪن ٿيون هاء پاور اي سي يا ڊي سي ڪرنٽ. اهي تيزيءَ سان تيزيءَ سان مٽائي سگھجن ٿا هڪ اعليٰ رڪاوٽ واري رياست کان گهٽ-امپيڊنس ڪنڊڪشن واري رياست ڏانهن، ٽريگر سگنل جي بنياد تي, اهڙيء طرح موجوده جي صحيح ڪنٽرول حاصل ڪرڻ.

جون خاصيتون ۽ فائداThyristor ماڊلز

اعلي طاقت سنڀالڻ جي صلاحيت: Thyristor ماڊلز انتهائي تيز voltages ۽ واهه کي برداشت ڪري سگهن ٿا, انهن کي صنعتي-گريڊ پاور ڪنورشن ۽ ڪنٽرول سسٽم لاءِ موزون بڻائڻ.

تيز جوابي وقت: تمام مختصر سوئچنگ وقت ۽ گھٽ نقصان اعلي ڪارڪردگي آپريشن کي يقيني بڻائي ٿو.

Reliability ۽ durability: بي ترتيب ڊيزائن, سخت ماحول ۾ مستحڪم آپريشن, ۽ ڊگهي زندگي.

آسان انضمام: ماڊلر ڊيزائن تنصيب کي آسان بڻائي ٿو ۽ سار سنڀال جي ضرورتن کي گھٽائي ٿو.

اوورلوڊ تحفظ: بلٽ ان حفاظتي ميڪانيزم جهڙوڪ اوور ٽمپريچر ۽ اوور ڪرنٽ تحفظ سسٽم جي حفاظت کي وڌائي ٿو.

ورسٽائل ايپليڪيشنون: وڏي پيماني تي استعمال ٿيل ايپليڪيشنن جي مختلف قسمن ۾ درست موجوده ڪنٽرول جي ضرورت هوندي آهي.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT component made for industrial power applications, integrating sophisticated Protected Entrance Bipolar Transistor (IGBT) innovation and ultra-fast diode components. This component is maximized for high-efficiency changing in demanding atmospheres such as motor drives, renewable resource systems, and commercial inverters.

** Key Specs: **.
– ** وولٹیج جي درجه بندي: ** The IGBT supports an optimum collector-emitter voltage (Vces) 1200V جي, while the integrated diode has a reverse voltage (Vrr) 1200V جي.
– ** Existing Ratings: ** Constant collection agency existing (Ic) is rated at 150A at 80 ° سي, with a pulsed current capability of as much as 300A. The diode’s average ahead existing (Ifav) is 150A.
– ** Switching over Efficiency: ** Low saturation voltage (Vce( sat)) جو 2.1 V at 150A ensures minimal transmission losses. Turn-on and turn-off times are enhanced for high-frequency procedure, lowering switching losses.
– ** Thermal Management: ** Reduced thermal resistance (رٿ( جي-سي)) جو 0.12 ° C/W for the IGBT and 0.15 ° C/W for the diode ensures efficient heat dissipation. The component runs within a junction temperature series of -40 ° C کان +150 ° C.- ** Diode Characteristics: ** The anti-parallel diode features a quick reverse recuperation time (trr) of 85ns, decreasing reverse recuperation losses and enhancing system performance.
– ** پيڪيج: ** Compact and durable 62mm x 108mm x 30mm module with screw terminals for safe high-current links. Includes electric seclusion (2500V AC/min) between elements and heatsink.
– ** Integrated Security: ** Integrated NTC thermistor enables real-time temperature level surveillance, while short-circuit and overcurrent defense safeguards the component.

** Compatibility & درخواستون: ** The FS150R12KT4 is compatible with conventional entrance drivers and control ICs, making it excellent for three-phase inverters, UPS سسٽم, and welding devices. While the component itself integrates IGBTs and diodes, exterior MOSFETs, SCRs, or thyristors might be made use of in auxiliary circuits for snubber networks or complementary power phases.

This component balances high power density, dependability, and thermal performance, meeting rigorous industrial standards for long life and effectiveness in high-voltage, high-current applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT (Shielded Gateway Bipolar Transistor) component developed for demanding power electronic devices applications. Incorporating an IGBT, diode, and advanced product packaging, this 1200V, 150A module provides efficient switching, thermal security, and toughness in high-power systems. Its integration of important elements like freewheeling diodes makes sure trustworthy procedure in circuits calling for bidirectional present circulation, making it ideal for industrial, قابل تجديد وسيلا, ۽ خودڪار ايپليڪيشنون.

** Industrial Motor Drives: ** The FS150R12KT4 excels in variable-frequency drives (VFDs) and servo controllers, where specific electric motor rate and torque control are important. Its low switching losses and high current capability enhance energy efficiency in manufacturing equipment, پمپس, and compressors.

** Renewable Resource Equipments: ** In solar inverters and wind generator converters, the component transforms DC to air conditioner power with very little losses. The anti-parallel diodes handle reverse recuperation, while the IGBT manages high-voltage changing, ensuring steady grid assimilation and optimum power harvest.

** Uninterruptible Power Material (يو پي ايس): ** The component’s fast switching capability gives smooth power shift throughout blackouts, crucial for data centers and medical care centers. Its toughness supports continual procedure under heavy loads.

** Welding Tools: ** The FS150R12KT4 allows accurate existing control in arc welding makers, ensuring regular performance and reduced warm dissipation.

** Electric Vehicles (EVs): ** Utilized in traction inverters, the component efficiently drives EV electric motors, enhancing battery variety and velocity.

Enhancing the IGBT module, ** thyristors (SCRs)** control high-power air conditioner systems, such as lighting controls and industrial heating units. ** MOSFETs ** deal with high-frequency changing in SMPS and RF amplifiers, while ** ٽرانسسٽر ** magnify signals in sound and control circuits. ** IC chips ** incorporate logic and defense attributes, optimizing system intelligence. With each other, these components– consisting of the FS150R12KT4– develop the foundation of contemporary electronic devices, making it possible for technology in automation, clean power, and wise modern technologies. Their synergy ensures dependability, performance, and scalability throughout markets, from hefty equipment to consumer electronics.

ڪمپني پروفائل

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) پاور اليڪٽرانڪس ٽيڪنالاجي ۽ پاور پروڊڪٽس ۾ معروف ادارن مان هڪ آهي, جيڪو مڪمل طور تي سولر انورٽرز ٺاهڻ ۾ شامل آهي， ٽرانسفارمر, وولٹیج ريگيوليٽر, تقسيم ڪابينا, thyristors， ماڊلز， ڊيوڊس， هيٽر, ۽ ٻيا اليڪٽرانڪ ڊوائيسز يا سيمي ڪنڊڪٽرز. اسان صارفين کي اعلي معيار سان مهيا ڪرڻ لاء پرعزم ڪيو ويندو, موثر پروڊڪٽس ۽ غور جي خدمت.

اهو ڪريڊٽ ڪارڊ ذريعي ادائيگي قبول ڪري ٿو, ٽي/ٽي, ويسٽ يونين, ۽ Paypal. PDDN FedEx ذريعي اوورسيز گراهڪن کي سامان موڪليندو, ڊي ايڇ ايل, سمنڊ ذريعي, يا هوا ذريعي. If you want high-quality electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4, مهرباني ڪري اسان کي انڪوائري موڪليو; اسان توهان جي مدد ڪرڻ لاء هتي هونداسين.

ادائگي جا طريقا

ايل/سي, ٽي/ٽي, ويسٽرن يونين, پي پال, ڪريڊٽ ڪارڊ وغيره.

ترسيل

سمنڊ ذريعي, هوا ذريعي, اظهار ذريعي, جيئن گراهڪن جي درخواست.

اسٽوريج جون حالتون

1) ڪمري جي حرارت تي خشڪ ماحول ۾ ذخيرو ڪريو.

2) نم ۽ اعلي درجه حرارت کان بچاء.

3) اندروني پيڪنگ بيگ کولڻ کان پوء فوري طور تي استعمال ڪريو.

5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT module designed for power electronics applications. هيٺ ڏنل پنج عام FAQs آهن جن سان سڌو سنئون جواب آهن:

**1. What are the primary applications of the FS150R12KT4 IGBT module?**
The FS150R12KT4 is ideal for high-power switching in industrial motor drives, renewable energy systems (solar/wind inverters), UPS سسٽم, electric vehicle charging stations, ۽ ويلڊنگ جو سامان. Its robust design supports high voltage (1200وي) and current (150اي) handling, ان کي گهربل ماحول لاء مناسب بڻائڻ.

**2. What key features enhance its performance?**
This module integrates advanced IGBT and diode technology, offering low saturation voltage (VCE(sat)) for reduced conduction losses and high switching efficiency. It includes a built-in temperature sensor for thermal monitoring, anti-parallel diodes for freewheeling current protection, and a compact, isolated package for easy mounting and heat dissipation.

**3. وولٹیج ۽ موجوده درجه بندي ڇا آهن?**
The FS150R12KT4 has a maximum collector-emitter voltage (VCES) of 1200V and a continuous collector current (IC) of 150A at 80°C. Peak current handling can reach up to 300A, ensuring reliability during transient overloads.

**4. How is thermal management addressed?**
Efficient heat dissipation is achieved through an aluminum nitride (AlN) ceramic substrate and low thermal resistance design. Users must pair the module with a properly sized heatsink, thermal paste, and active cooling (fans or liquid cooling) in high-load applications. Operating temperature should stay below 150°C to prevent damage.

**5. What ensures long-term reliability?**
زندگي جي مدت آپريٽنگ حالتن تي منحصر آهي. Staying within rated voltage, موجوده, and temperature limits is critical. Avoid mechanical stress during installation, ensure clean power input to reduce voltage spikes, and follow the manufacturer’s guidelines for storage and handling. Regular maintenance and thermal cycling checks further enhance durability, typically offering tens of thousands of hours in standard applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)