New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

Introduction of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery (جي ٽي او) ۽ تيز بحالي ڊيوڊ (ايف آر ڊي) ماڊل پاور اليڪٽرانڪس ۾ اهم اجزاء آهن, گھٽ فارورڊ وولٽيج ڊراپ ۽ FRDs جي تيز بحالي واري وقت سان GTOs جي تيز رفتار بند ڪرڻ واري خاصيتن کي گڏ ڪرڻ. اهي ماڊلز اعلي وولٽيجز ۽ تيز وهڪرن تي موثر سوئچنگ ڪارڪردگي مهيا ڪرڻ جي قابل آهن ۽ وڏي پيماني تي ايپليڪيشنن ۾ استعمال ٿيندا آهن جن کي تيز رفتار جي ضرورت هوندي آهي., موثر طاقت جي تبديلي.

Features and Benefits of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

تيز رفتار بند ڪرڻ جي صلاحيت: GTOs جلدي بند ڪري سگھن ٿا جڏهن منفي دروازي جي نبض لاڳو ٿئي ٿي, ڊرامائي طور تي سوئچنگ نقصان کي گهٽائڻ.

گھٽ فارورڊ وولٽيج ڊراپ: FRDs ۾ گھٽ اڳتي وڌڻ واري وولٹیج ڊراپ آھي, پهچائڻ جي نقصان کي گهٽائڻ ۽ مجموعي ڪارڪردگي کي بهتر ڪرڻ.

اعلي inrush موجوده رواداري: بغير ڪنهن نقصان جي عارضي تيز-موجوده رسيد کي سنڀالڻ جي قابل, سسٽم جي استحڪام ۽ استحڪام کي وڌائڻ.

ڪمپيڪٽ ڊيزائن: GTO ۽ FRD کي ھڪڙي ماڊل ۾ ضم ڪرڻ سسٽم جي سائيز کي گھٽائي ٿو ۽ سرڪٽ ڊيزائن کي آسان بڻائي ٿو.

بهترين حرارتي ڪارڪردگي: سٺي تھرمل ڊيزائن کي بھاري لوڊ حالتن جي تحت مستحڪم آپريشن کي يقيني بڻائي ٿي.

گھٽ برقي مقناطيسي مداخلت (EMI): ان جي تيز بحالي جي خاصيتن جي ڪري, اهو مؤثر طريقي سان EMI کي گھٽائي سگھي ٿو ۽ طاقت جي معيار کي بهتر بڻائي سگھي ٿو.

(New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery)

Specification of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

The IRFB4229PBF is a high-performance N-channel MOSFET transistor designed for power-switching applications, offering robust efficiency and reliability. Packaged in a TO-220 format, this component is ideal for industrial, automotive, ۽ قابل تجديد توانائي سسٽم. Key specifications include a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 120A at 25°C, making it suitable for high-current applications. The pulsed drain current reaches 480A, ensuring resilience during transient load conditions. With a low on-resistance (Rds(on)) of 3.3mΩ (max at Vgs=10V), it minimizes conduction losses, enhancing energy efficiency.

The IRFB4229PBF features a gate charge (Qg) of 210nC (typical) and a gate threshold voltage (Vgs(th)) of 2V to 4V, enabling fast switching for PWM-driven circuits. Its robust thermal performance is supported by a low thermal resistance (RθJA) of 62°C/W, paired with a power dissipation rating of 330W. The integrated body diode offers reverse recovery protection, with a diode forward voltage (Vsd) of 1.5V (max) at 120A.

This transistor is RoHS-compliant and operates within a temperature range of -55°C to 175°C, ensuring durability in harsh environments. The TO-220 package allows easy mounting and heat sinking, with a recommended torque of 0.5 N·m for terminal screws. Applications include DC-DC converters, موٽر ڊرائيو, UPS سسٽم, and solar inverters.

BOM (Bill of Materials) support is streamlined, as the IRFB4229PBF is compatible with standard drivers and PCB layouts. For optimal performance, pair it with gate drivers like IRS2186 or similar, and use 10-15V gate-source voltage. Fast delivery options are available globally, with stock maintained for urgent orders.

تت ۾, the IRFB4229PBF combines high power density, thermal efficiency, and switching speed, making it a versatile choice for demanding applications. Its TO-220 package ensures ease of integration, while its electrical specs cater to both industrial and commercial power systems. Reliable performance, compliance with environmental standards, and accessible inventory solidify its position as a go-to MOSFET for engineers prioritizing efficiency and fast deployment.

(New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery)

Applications of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

The IRFB4229PBF from Infineon Technologies is a high-performance N-channel MOSFET in a TO-220 package, engineered for demanding high-power applications. Featuring a 250V voltage rating and a continuous drain current of 195A, this transistor delivers ultra-low on-resistance (Rds(on)) for superior efficiency and minimal heat generation. Its robust design ensures reliability in harsh environments, making it a preferred choice for industrial, automotive, ۽ قابل تجديد توانائي سسٽم.

Primary applications include switch-mode power supplies (ايس ايم پي ايس), DC-DC converters, motor control circuits, and industrial inverters. The IRFB4229PBF excels in automotive applications such as electric vehicle (EV) powertrains, battery management systems, ۽ آن بورڊ چارجرز. In renewable energy, it is integral to solar inverters and wind turbine converters, where efficient power conversion is critical. اضافي طور تي, it is used in welding equipment, اڻ رڪاوٽ بجلي جي فراهمي (يو پي ايس), and high-current power tools. The TO-220 package enhances thermal management, enabling effective heat dissipation via heatsinks—essential for sustained high-current operations in motor drives and power inverters.

To simplify integration, the IRFB4229PBF comes with comprehensive Bill of Materials (BOM) support, detailing compatible gate drivers, resistors, capacitors, and protection components like transient voltage suppressors. This BOM guidance accelerates design cycles, reduces sourcing complexity, and ensures system reliability. Engineers can leverage pre-validated component lists to optimize circuit performance and avoid compatibility issues.

Fast delivery is guaranteed, with ample stock available for immediate dispatch. Partnering with global logistics networks ensures same-day shipping for urgent orders, minimizing project lead times. Each IRFB4229PBF unit is factory-tested and RoHS-compliant, adhering to stringent quality and environmental standards.

تت ۾, the IRFB4229PBF combines high-power capabilities with seamless integration support and rapid availability. Whether for industrial automation, next-gen automotive solutions, or sustainable energy projects, this MOSFET offers unmatched performance, استحڪام, ۽ ڪارڪردگي.

ڪمپني پروفائل

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) پاور اليڪٽرانڪس ٽيڪنالاجي ۽ پاور پروڊڪٽس ۾ معروف ادارن مان هڪ آهي, جيڪو مڪمل طور تي سولر انورٽرز ٺاهڻ ۾ شامل آهي， ٽرانسفارمر, وولٹیج ريگيوليٽر, تقسيم ڪابينا, thyristors， ماڊلز， ڊيوڊس， هيٽر, ۽ ٻيا اليڪٽرانڪ ڊوائيسز يا سيمي ڪنڊڪٽرز. اسان صارفين کي اعلي معيار سان مهيا ڪرڻ لاء پرعزم ڪيو ويندو, موثر پروڊڪٽس ۽ غور جي خدمت.

اهو ڪريڊٽ ڪارڊ ذريعي ادائيگي قبول ڪري ٿو, ٽي/ٽي, ويسٽ يونين, ۽ Paypal. PDDN FedEx ذريعي اوورسيز گراهڪن کي سامان موڪليندو, ڊي ايڇ ايل, سمنڊ ذريعي, يا هوا ذريعي. If you want high-quality New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery, مهرباني ڪري اسان کي انڪوائري موڪليو; اسان توهان جي مدد ڪرڻ لاء هتي هونداسين.

ادائگي جا طريقا

ايل/سي, ٽي/ٽي, ويسٽرن يونين, پي پال, ڪريڊٽ ڪارڊ وغيره.

ترسيل

سمنڊ ذريعي, هوا ذريعي, اظهار ذريعي, جيئن گراهڪن جي درخواست.

اسٽوريج جون حالتون

1) ڪمري جي حرارت تي خشڪ ماحول ۾ ذخيرو ڪريو.

2) نم ۽ اعلي درجه حرارت کان بچاء.

3) اندروني پيڪنگ بيگ کولڻ کان پوء فوري طور تي استعمال ڪريو.

5 FAQs of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

What is the primary application of the IRFB4229PBF transistor? The IRFB4229PBF is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is commonly used in power supplies, motor control systems, DC-DC converters, and inverters. With a low on-resistance (Rds(on)) جو 3.6 mΩ and a drain-source voltage (Vds) rating of 250V, it efficiently handles high current loads up to 195A (pulsed), making it ideal for industrial and automotive applications requiring robust performance and thermal stability.

What are the key electrical specifications of the IRFB4229PBF? This MOSFET operates at a maximum drain-source voltage (Vds) of 250V and a continuous drain current (Id) of 75A at 25°C, which decreases with temperature. The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, and it features a fast switching speed due to low gate charge (Qg) of 210nC. Its avalanche energy rating ensures reliability in high-stress conditions. Always refer to the datasheet for derating guidelines based on thermal and electrical conditions.

Does the IRFB4229PBF require specific components in the BOM (Bill of Materials)? ها. To optimize performance, pair the IRFB4229PBF with a gate driver (مثال, IR2110 or HCPL-3120) to ensure proper voltage levels for switching. Include a gate resistor (10-100Ω) to control rise/fall times and suppress oscillations. A freewheeling diode (مثال, STTH8R06) is recommended for inductive load protection. Thermal management components like heatsinks, thermal pads, and mounting hardware are essential due to its TO-220 package and high-power dissipation.

What is the typical delivery time for the IRFB4229PBF? Most distributors stock the IRFB4229PBF in bulk, enabling fast delivery within 1-3 business days for standard orders. Express shipping options are available for urgent requirements. Ensure compatibility with your location and supplier inventory for accurate lead times. This part is widely available through authorized channels like Infineon’s network or trusted electronics distributors.

How does the IRFB4229PBF compare to similar MOSFETs like the IRFB4232 or IRFB4110? The IRFB4229PBF offers a balance of voltage (250وي) and current (75A continuous) ratings, suited for medium-high power applications. The IRFB4232 (250وي, 104اي) has lower Rds(on) but higher cost, while the IRFB4110 (100وي, 180اي) is better for lower-voltage, higher-current scenarios. Choose the IRFB4229PBF for cost-effective 250V systems requiring efficient thermal performance and fast switching. Always cross-check specifications with your application’s requirements.

(New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery)