electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

Pārskats parTiristoru moduļi

Tiristoru moduļi ir galvenās jaudas elektronikas tehnoloģijas sastāvdaļas. Tie sastāv no viena vai vairākiem tiristoriem, kas iekapsulēti kompaktā korpusā. Tiristori ir četrslāņu, trīs spaiļu pusvadītāju ierīces, ko galvenokārt izmanto lietojumprogrammās, kas kontrolē un regulē lieljaudas maiņstrāvu vai līdzstrāvu. Tie var ātri pārslēgties no augstas pretestības stāvokļa uz zemas pretestības vadīšanas stāvokli, pamatojoties uz sprūda signālu, tādējādi panākot precīzu strāvas kontroli.

Funkcijas un priekšrocībasTiristoru moduļi

Augstas jaudas apstrādes spēja: Tiristoru moduļi var izturēt ārkārtīgi augstu spriegumu un strāvu, padarot tos piemērotus rūpnieciskām jaudas pārveidošanas un vadības sistēmām.

Ātrs reakcijas laiks: Ļoti īss pārslēgšanās laiks un zemi zudumi nodrošina augstas efektivitātes darbību.

Uzticamība un izturība: Izturīgs dizains, stabila darbība skarbos apstākļos, un ilgs mūžs.

Viegla integrācija: Moduļu konstrukcija vienkāršo uzstādīšanu un samazina apkopes prasības.

Pārslodzes aizsardzība: Iebūvētie aizsardzības mehānismi, piemēram, pārkaršanas un pārslodzes aizsardzība uzlabo sistēmas drošību.

Daudzpusīgas lietojumprogrammas: Plaši izmanto dažādās lietojumprogrammās, kurām nepieciešama precīza strāvas kontrole.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT component made for industrial power applications, integrating sophisticated Protected Entrance Bipolar Transistor (IGBT) innovation and ultra-fast diode components. This component is maximized for high-efficiency changing in demanding atmospheres such as motor drives, atjaunojamo resursu sistēmas, and commercial inverters.

** Key Specs: **.
– ** Voltage Rankings: ** The IGBT supports an optimum collector-emitter voltage (Vces) no 1200 V, while the integrated diode has a reverse voltage (Vrr) no 1200 V.
– ** Existing Ratings: ** Constant collection agency existing (Ic) is rated at 150A at 80 °C, with a pulsed current capability of as much as 300A. The diode’s average ahead existing (Ifav) is 150A.
– ** Switching over Efficiency: ** Low saturation voltage (Vce( sat)) no 2.1 V at 150A ensures minimal transmission losses. Turn-on and turn-off times are enhanced for high-frequency procedure, lowering switching losses.
– ** Siltuma vadība: ** Reduced thermal resistance (Rth( j-c)) no 0.12 ° C/W for the IGBT and 0.15 ° C/W for the diode ensures efficient heat dissipation. The component runs within a junction temperature series of -40 ° C līdz +150 °C.- ** Diode Characteristics: ** The anti-parallel diode features a quick reverse recuperation time (trr) of 85ns, decreasing reverse recuperation losses and enhancing system performance.
– ** Package: ** Compact and durable 62mm x 108mm x 30mm module with screw terminals for safe high-current links. Includes electric seclusion (2500V AC/min) between elements and heatsink.
– ** Integrated Security: ** Integrated NTC thermistor enables real-time temperature level surveillance, while short-circuit and overcurrent defense safeguards the component.

** Saderība & Lietojumprogrammas: ** The FS150R12KT4 is compatible with conventional entrance drivers and control ICs, making it excellent for three-phase inverters, UPS sistēmas, and welding devices. While the component itself integrates IGBTs and diodes, exterior MOSFETs, SCR, or thyristors might be made use of in auxiliary circuits for snubber networks or complementary power phases.

This component balances high power density, dependability, un siltuma veiktspēja, meeting rigorous industrial standards for long life and effectiveness in high-voltage, high-current applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT (Shielded Gateway Bipolar Transistor) component developed for demanding power electronic devices applications. Incorporating an IGBT, diode, and advanced product packaging, this 1200V, 150A module provides efficient switching, termiskā drošība, and toughness in high-power systems. Its integration of important elements like freewheeling diodes makes sure trustworthy procedure in circuits calling for bidirectional present circulation, padarot to ideāli piemērotu rūpnieciskai lietošanai, atjaunojams resurss, un automobiļu lietojumprogrammas.

** Rūpnieciskie motora piedziņas: ** The FS150R12KT4 excels in variable-frequency drives (VFD) and servo controllers, where specific electric motor rate and torque control are important. Its low switching losses and high current capability enhance energy efficiency in manufacturing equipment, sūkņi, un kompresoriem.

** Atjaunojamo resursu aprīkojums: ** In solar inverters and wind generator converters, the component transforms DC to air conditioner power with very little losses. The anti-parallel diodes handle reverse recuperation, while the IGBT manages high-voltage changing, ensuring steady grid assimilation and optimum power harvest.

** Nepārtrauktās strāvas materiāls (UPS): ** The component’s fast switching capability gives smooth power shift throughout blackouts, crucial for data centers and medical care centers. Its toughness supports continual procedure under heavy loads.

** Welding Tools: ** The FS150R12KT4 allows accurate existing control in arc welding makers, ensuring regular performance and reduced warm dissipation.

** Electric Vehicles (EV): ** Utilized in traction inverters, the component efficiently drives EV electric motors, enhancing battery variety and velocity.

Enhancing the IGBT module, ** tiristori (SCR)** control high-power air conditioner systems, such as lighting controls and industrial heating units. ** MOSFET ** deal with high-frequency changing in SMPS and RF amplifiers, kamēr ** tranzistori ** magnify signals in sound and control circuits. ** IC mikroshēmas ** incorporate logic and defense attributes, optimizing system intelligence. Viens ar otru, these components– consisting of the FS150R12KT4– develop the foundation of contemporary electronic devices, making it possible for technology in automation, clean power, and wise modern technologies. Their synergy ensures dependability, sniegumu, and scalability throughout markets, from hefty equipment to consumer electronics.

Uzņēmuma profils

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) ir viens no vadošajiem uzņēmumiem jaudas elektronikas tehnoloģiju un enerģijas produktu jomā, kas ir pilnībā iesaistīts saules invertoru izstrādē， transformatori, sprieguma regulatori, sadales skapji, tiristori， moduļi， diodes， sildītāji, un citas elektroniskas ierīces vai pusvadītāji. Mēs būsim apņēmušies nodrošināt lietotājiem augstu kvalitāti, efektīvi produkti un uzmanīgs serviss.

Tas pieņem maksājumus ar kredītkarti, T/T, Rietumu savienība, un Paypal. PDDN nosūtīs preces klientiem ārzemēs, izmantojot FedEx, DHL, pa jūru, vai pa gaisu. If you want high-quality electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4, lūdzu, sūtiet mums pieprasījumus; mēs būsim šeit, lai jums palīdzētu.

Maksājumu veidi

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Sūtījums

Pa jūru, pa gaisu, ar eksprespasta palīdzību, pēc klientu pieprasījuma.

Uzglabāšanas apstākļi

1) Uzglabāt sausā vidē istabas temperatūrā.

2) Izvairieties no mitruma un augstas temperatūras.

3) Izlietot uzreiz pēc iekšējā iepakojuma maisiņa atvēršanas.

5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT module designed for power electronics applications. Below are five common FAQs with direct answers:

**1. What are the primary applications of the FS150R12KT4 IGBT module?**
The FS150R12KT4 is ideal for high-power switching in industrial motor drives, atjaunojamās enerģijas sistēmas (solar/wind inverters), UPS sistēmas, electric vehicle charging stations, un metināšanas iekārtas. Its robust design supports high voltage (1200V) and current (150A) apstrāde, making it suitable for demanding environments.

**2. What key features enhance its performance?**
This module integrates advanced IGBT and diode technology, offering low saturation voltage (VCE(sat)) for reduced conduction losses and high switching efficiency. It includes a built-in temperature sensor for thermal monitoring, anti-parallel diodes for freewheeling current protection, and a compact, isolated package for easy mounting and heat dissipation.

**3. Kādi ir sprieguma un strāvas rādītāji?**
The FS150R12KT4 has a maximum collector-emitter voltage (VCES) of 1200V and a continuous collector current (IC) of 150A at 80°C. Peak current handling can reach up to 300A, ensuring reliability during transient overloads.

**4. How is thermal management addressed?**
Efficient heat dissipation is achieved through an aluminum nitride (AlN) ceramic substrate and low thermal resistance design. Users must pair the module with a properly sized heatsink, thermal paste, and active cooling (fans or liquid cooling) in high-load applications. Operating temperature should stay below 150°C to prevent damage.

**5. What ensures long-term reliability?**
Kalpošanas laiks ir atkarīgs no ekspluatācijas apstākļiem. Staying within rated voltage, strāva, and temperature limits is critical. Avoid mechanical stress during installation, ensure clean power input to reduce voltage spikes, and follow the manufacturer’s guidelines for storage and handling. Regular maintenance and thermal cycling checks further enhance durability, typically offering tens of thousands of hours in standard applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)