R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

高速ターンオフ サイリスタの概要 (GTO)

高速ターンオフ サイリスタ, 一般にゲートターンオフサイリスタと呼ばれます (GTO), ゲート信号によってオン/オフできる半導体デバイスの一種です. 標準的なサイリスタとは異なります, ゲート信号によってのみオンになり、そこを流れる電流を特定のしきい値以下に減らすことによってオフになります。 (保持電流), GTO は、負のゲート パルスを印加することでアクティブにオフにすることができます. この機能により、デバイスのスイッチング動作をより正確に制御できるようになります。.
GTO はモータードライブなどの高出力アプリケーションで使用されます, 電源, とインバータ, 大電流の迅速かつ制御されたスイッチングが容易になります。. 他のほとんどのタイプのトランジスタよりも高い電流と電圧で動作します。, 耐久性の高い産業用および商業用途に適しています。.

高速ターンオフサイリスタの特長 (GTO)

アクティブターンオフ機能: 負のゲートパルスを印加することでオフ可能, スイッチングをより適切に制御できるようにする.
ハイパワーハンドリング: 高レベルの電力を管理可能, 多くの場合、従来のサイリスタの定格を超える定格を備えています.
高速スイッチング: ターンオン時間とターンオフ時間が速いように設計されています, 電力変換回路の効率的な動作を可能にする.
大電流容量: 大きな電流を処理できる, 大量の電力供給を必要とするアプリケーションに最適です。.
高電圧耐性: 高電圧に耐えることができます, 要求の厳しい環境における信頼性の向上に貢献.
低いオン状態電圧降下: 通電時の電力損失を最小限に抑える, 全体的な効率の向上.
ゲートドライブの要件: 信頼性の高いターンオンおよびターンオフ動作を保証するには、ゲート駆動回路を慎重に設計する必要がある.
複雑な制御回路: 正と負の両方のゲートパルスが必要なため, 制御回路は単純なサイリスタに比べて複雑になる可能性があります.
スナバ回路: 多くの場合、スイッチング時の電圧スパイクから保護するためにスナバ回路が必要です.
熱管理: 高電力レベルが必要となるため、効率的な熱放散が重要です。.

(R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor)

Specification of R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

The R0830LS12E, R0830LS12F, and R0830LS12X are high-performance rapid turn-off thyristors created for requiring power electronics applications. These dispersed entrance thyristors integrate durable current-handling capacities with rapid changing performance, making them suitable for high-frequency, high-power circuits. With a repeated peak reverse voltage (VRRM) of 1200V and a typical on-state existing (ITAV) score of 830A, these devices are engineered to handle hefty tons while keeping security and effectiveness.

Trick specs consist of a reduced gate trigger existing (IGT) of 200mA (common) and an entrance trigger voltage (VGT) of 3V (最大), guaranteeing dependable and precise changing control. The distributed gateway framework enhances turn-on harmony, minimizing hot-spot threats and enhancing general gadget reliability. The rapid turn-off time (tq) の 14 microseconds (最大) decreases switching losses, allowing efficient operation in high-frequency inverters, 電気モータードライブ, and pulsed power systems.

These thyristors feature a sturdy press-fit or stud-mounted bundle designed for ideal thermal monitoring, with a maximum joint temperature level (Tj) の 125 ℃. 熱抵抗 (Rthjc) is kept reduced at 0.08 ℃/W, making certain effective warm dissipation under continuous procedure. Rise existing ability (I²t)of 400kA ² s allows the gadgets to hold up against short-circuit conditions, improving system durability.

The R0830LS12 series is enhanced for applications calling for rapid switching and high dependability, such as commercial motor controls, renewable energy converters, UPSシステム, および溶接装置. The distributed gate style makes certain even present circulation throughout turn-on, lowering anxiety on the silicon framework and prolonging operational life-span.

Distinctions in between the E, F, and X versions lie in tailored performance parameters. 例えば, the R0830LS12X (-14 x) alternative emphasizes ultra-fast turn-off for applications calling for very little delay times. All models abide by sector requirements for voltage and existing rankings, with extensive testing for surge strength, thermal biking, and long-lasting security.

These thyristors are ideal for designers seeking an equilibrium between high-power handling and quick changing in compact, robust bundles. Their design focuses on ease of integration into existing systems while supplying constant performance in harsh environments. With reduced leakage currents and high dv/dt ratings, the R0830LS12 series makes certain trustworthy operation in high-noise industrial setups.

(R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor)

Applications of R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

The R0830LS12E, R0830LS12F, and R0830LS12X are high-performance fast turn-off thyristors developed for requiring industrial and power electronics applications. These gadgets belong to a series of dispersed gate thyristors rated for 830A ahead existing and 1200V blocking voltage, making them ideal for high-power switching circumstances. Their sophisticated style makes sure quick changing, boosted thermal administration, and durable performance in high-stress settings.

A crucial function of these thyristors is their ** fast turn-off capability **, with a turn-off time of 14 microseconds (-14 x), considerably lowering changing losses and enhancing system effectiveness. This makes them ideal for high-frequency applications such as motor drives, インバータ, and pulsed power systems. の ** dispersed gate modern technology ** guarantees consistent triggering across the thyristor’s surface area, boosting turn-on dependability and minimizing local heating. This layout additionally enhances dynamic security, also under high di/dt and dv/dt problems, extending functional life expectancy.

These thyristors excel in applications requiring exact control and high integrity. Typical usage instances consist of commercial motor controllers, 再生可能エネルギーシステム (wind and solar inverters), grip systems for electric automobiles, and HVDC power transmission. Their 1200V voltage rating and 830A present capability permit them to take care of extreme tons, while maximized thermal attributes make sure efficient warmth dissipation, essential for constant procedure.

The R0830LS12 collection is engineered for durability, with reduced thermal resistance and robust building and construction to withstand voltage spikes and temperature level variations. This makes them suitable for rough settings such as heavy machinery, grid infrastructure, and transport systems. さらに, their compatibility with modern-day vehicle driver circuits streamlines assimilation right into existing layouts.

Industries leveraging these thyristors benefit from decreased energy losses, higher power density, and enhanced system reliability. Whether in clever grids, 商業オートメーション, or renewable energy jobs, the R0830LS12E, R0830LS12F, and R0830LS12X provide the performance required to satisfy today’s effectiveness and sustainability needs. Their combination of rapid switching, high power handling, and thermal strength placements them as critical elements in next-generation power electronic devices options.

会社概要

洛陽大唐エネルギー技術有限公司(sales@pddn.com) パワーエレクトロニクス技術とパワー製品の大手企業の1つです, 太陽光発電インバーターの開発に全面的に取り組んでいます， 変圧器, 電圧レギュレータ, 配電盤, サイリスタ， モジュール， ダイオード， ヒーター, およびその他の電子デバイスまたは半導体. ユーザーに高品質なサービスを提供することに尽力していきます, 効率的な製品と思いやりのあるサービス.

クレジットカードによる支払いを受け付けます, T/T, ウェストユニオン, とペイパル. PDDN は FedEx を通じて海外の顧客に商品を発送します。, DHL, 海によって, または空路で. If you want high-quality R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor, お問い合わせをお送りください; 私たちはあなたを助けるためにここにいます.

支払い方法

信用状, T/T, ウエスタンユニオン, ペイパル, クレジットカードなど.

出荷

海沿い, 飛行機で, 速達で, 顧客の要求に応じて.

保管条件

1) 室温の乾燥した環境に保管してください.

2) 湿気や高温を避けてください.

3) 内包装袋開封後はすぐにご使用ください.

5 FAQs of R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor

What are the R0830LS12E, R0830LS12F, and R0830LS12X thyristors? These are high-power fast turn-off thyristors designed for high-voltage, 大電流アプリケーション. They feature a 1200V blocking voltage, 830A average current rating, and a distributed gate structure for optimized switching performance. の “14x fast turn-off” designation indicates rapid switching capabilities, making them suitable for circuits requiring precise control, such as inverters, モータードライブ, or pulsed power systems. The models share core specifications but may differ in minor parameters like gate triggering requirements or thermal performance.

How does the distributed gate design improve performance? The distributed gate architecture ensures uniform triggering across the thyristor’s semiconductor area, reducing turn-on time and minimizing localized hot spots. This enhances reliability under high-stress conditions, improves switching efficiency, and supports higher frequency operation compared to conventional thyristors. It also contributes to lower power losses during switching transitions.

What is the significance of the “14x fast turn-off” feature? The term “14x” refers to the thyristor’s ultra-fast turn-off capability, which is critical for reducing switching losses and enabling operation in high-frequency circuits. This allows the device to handle rapid transitions between on and off states, making it ideal for applications like DC-AC converters or snubberless designs where minimizing heat generation and improving system efficiency are priorities.

What are the current and voltage limits for these thyristors? These devices are rated for 830A average current and 1200V repetitive peak off-state voltage. They can handle surge currents significantly higher than the average rating for short durations. しかし, derating guidelines must be followed based on temperature, cooling conditions, and duty cycle to ensure longevity. Always consult the datasheet for absolute maximum ratings and thermal management requirements.

In what applications are these thyristors commonly used? Their high current-voltage capacity and fast switching make them ideal for industrial power electronics, including traction systems, induction heating, UPSシステム, 再生可能エネルギー用インバータ. They are also used in pulsed power setups, such as laser drivers or medical equipment, where precise, high-energy pulses are required. The robust design suits harsh environments with elevated temperatures or electrical noise.

(R0830LS12E R0830LS12F R0830LS12F Fast thyritors R0830LS12X -14x fast turn off thyristor 830A 1200V distributed gate thyristor)