Ngwa elektrọnik IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

Nchịkọta nkeỤdị Thyristor

Modul Thyristor bụ ihe ndị bụ isi na teknụzụ eletriki ike. Ha nwere otu thyristors ma ọ bụ karịa nke etinyere n'ime ụlọ kọmpat. Thyristors dị okpukpu anọ, Ngwaọrụ semiconductor atọ nke a na-ejikarị na ngwa ndị na-achịkwa ma na-achịkwa ike dị elu AC ma ọ bụ DC ugbu a.. Ha nwere ike gbanwee ngwa ngwa site na ọnọdụ dị elu na-eme ka ọ bụrụ ọnọdụ nchịkwa dị ala na-adabere na mgbaàmà na-akpalite, si otú a na-enweta kpọmkwem njikwa nke ugbu a.

Atụmatụ na uru nkeỤdị Thyristor

Ike njikwa ike dị elu: Ụdị Thyristor nwere ike iguzogide oke voltaji na ikuku, na-eme ka ha dị mma maka ngbanwe ike na usoro nchịkwa nke ụlọ ọrụ mmepụta ihe.

Oge nzaghachi ngwa ngwa: Oge mgbanwe dị mkpụmkpụ na obere mfu na-eme ka arụ ọrụ dị elu rụọ ọrụ.

Ntụkwasị obi na ogologo oge: Nhazi siri ike, arụ ọrụ kwụsiri ike na gburugburu ebe siri ike, na ogologo ndu.

Ngwakọta dị mfe: Nhazi modular na-eme ka nrụnye dị mfe ma belata ihe ndị chọrọ nrụzi.

Nchekwa oke ibu: Usoro nchekwa etinyere n'ime ya dị ka oke okpomoku na nchekwa dị ugbu a na-akwalite nchekwa sistemu.

Ngwa dị iche iche: Ejiri ya n'ọtụtụ ngwa dị iche iche na-achọ njikwa njikwa ugbu a.

(Ngwa elektrọnik IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 is a high-performance IGBT component created for durable power electronics applications, integrating innovative Shielded Gateway Bipolar Transistor (IGBT) innovation with ultrafast recuperation diodes. It runs at an optimum voltage score of 1600V and a constant enthusiast current of 130A, making it appropriate for high-power systems such as industrial electric motor drives, ndị inverters ume ọhụrụ, na usoro UPS. The component features low saturation voltage (VCE(nọdụ) nke 2.2 V typical at 130A) and minimal switching losses, guaranteeing high effectiveness. Its integrated anti-parallel diodes show a reduced ahead voltage drop (VF of 1.6 V normal at 130A) and a fast reverse recovery time (trr ≤ 100ns), improving reliability in freewheeling and snubber circuits. The thyristor/SCR elements within the module support rise present taking care of as much as 800A (na-abụghị ugboro ugboro) and include a gate trigger voltage (VGT) of 3V with a holding existing (IH) of 200mA for stable switching. The MOSFET area uses reduced on-resistance (RDS(na) ≤ 25mΩ) and high-speed switching capacities (rise/fall times ≤ 50ns). Thermal efficiency is optimized with a reduced thermal resistance (Rth(j-c) ≤ 0.12 Celsius C/W) and an operating junction temperature variety of -40 ° C ka +150 Celsius C, suitable with standard heatsink installing. The component’s small, isolated baseplate design ensures very easy setup and durability in rough atmospheres. Certifications include UL recognition and RoHS conformity. Made for scalability, the PK130FG160 is ideal for applications calling for specific control, elu arụmọrụ, and lasting reliability in medium- na usoro voltaji dị elu. Additional versions in the product family support tailored setups for diodes, thyristors, Ndị SCR, and MOSFETs, tailored to details voltage/current demands.

(Ngwa elektrọnik IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 IGBT module, together with diodes, thyristors, Ndị SCR, transistor, and MOSFETs, works as a keystone in modern power electronic devices, making it possible for reliable energy control throughout varied sectors. Ndị IGBT (Shielded Entrance Bipolar Transistor) component excels in high-power switching applications, integrating the rapid switching of MOSFETs with the high-current handling of bipolar transistors. The PK130FG160, with its robust 130A/1600V ranking, is excellent for commercial electric motor drives, ndị inverters ume ọhụrụ (anyanwụ/ifufe), and electrical car (EV) usoro traction, where high voltage and thermal stability are essential. Diodes, such as freewheeling or rectifier diodes, are integral in transforming air conditioning to DC, safeguarding circuits from voltage spikes, and ensuring smooth current circulation in power supplies, chaja batrị, na ndị na-ahụ maka moto eletriki. Thyristors and SCRs (Silicon-Controlled Rectifiers) are made use of for accurate air conditioner power control in applications like lights dimmers, heater, na ngwá ọrụ azụmahịa. Their capacity to manage high voltages and currents makes them ideal for phase-angle control in motor speed policy and voltage stablizing. Transistors, consisting of bipolar joint transistors (BJTs), intensify and change signals in low-power circuits, frequently located in audio amplifiers, sensing unit interfaces, and control systems. MOSFET, with their high-speed changing and reduced on-resistance, dominate in switch-mode power supplies (SMPS), Ndị ntụgharị DC-DC, and high-frequency applications like induction home heating and RF amplifiers. The PK130FG160 IGBT component’s innovative thermal administration and low transmission losses improve performance in high-power inverters and UPS systems. Na mmeghari ume usoro, it makes certain stable power conversion, while in EVs, it maximizes electric motor control and energy recuperation. Ọnụ, these elements enable advancements in automation, green power, and wise grid technologies, driving dependability and performance sought after atmospheres. Their harmony in circuits makes sure seamless power conversion, defense, and control, making them indispensable ahead of time modern-day electronic devices.

Nkọwapụta Ụlọ ọrụ

Ụgwọ nke ụlọ ọrụ Luoyang Datang Energy Tech Co.,Ltd(sales@pddn.com) bụ otu n'ime ụlọ ọrụ na-eduga na teknụzụ ọkụ eletrik na ngwaahịa ike, nke na-etinye aka n'ụzọ zuru ezu n'ịmepụta ihe ntụgharị anyanwụ， ihe ntụgharị, ndị na-achịkwa voltaji, nkesa kabinet, thyristors， modul， diodes， ndị na-ekpo ọkụ, na ngwaọrụ eletrọnịkị ndị ọzọ ma ọ bụ semiconductors. Anyị ga-agba mbọ ịnye ndị ọrụ oke mma, ngwaahịa na-arụ ọrụ nke ọma na ọrụ nlezianya.

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5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 IGBT Module integrates advanced power semiconductor technology for high-performance applications. Below are the top FAQs about this component:

**1. What are the primary applications of the PK130FG160 IGBT Module?**
The PK130FG160 is designed for high-power switching in industrial and commercial systems, gụnyere moto draịva, UPS (ike na-adịghị akwụsị akwụsị), ndị inverters ume ọhụrụ (anyanwụ/ifufe), akụrụngwa ịgbado ọkụ, na usoro traction. Its robust design supports high voltage (up to 1600V) na nke ugbu a (130A), making it ideal for demanding environments like electric vehicles and industrial automation.

**2. What are the key features of the PK130FG160?**
This module combines an IGBT, freewheeling diode, and thyristor/SCR elements in a single package, reducing system complexity. Key specs include a 1600V blocking voltage, 130A continuous current rating, low saturation voltage (VCE(nọdụ)), and high switching speed. It also features low thermal resistance, built-in temperature monitoring, and short-circuit protection for enhanced reliability.

**3. How does the PK130FG160 handle thermal management?**
The module uses an insulated metal substrate and advanced packaging materials to dissipate heat efficiently. Maka ịrụ ọrụ kacha mma, it must be mounted on a heatsink with thermal grease or pads. Ọnọdụ okpomọkụ na-arụ ọrụ sitere na -40 ° C ruo 150 ° C, but consistent cooling is critical to prevent overheating and ensure longevity in high-load scenarios.

**4. What advantages does the PK130FG160 offer over similar modules?**
It delivers superior power density, lower switching losses, and higher efficiency compared to standard IGBT or MOSFET modules. The integrated diode and thyristor components eliminate the need for external anti-parallel diodes, simplifying circuit design. Its rugged construction ensures durability in high-vibration or high-humidity environments.

**5. What safety precautions should be taken when using the PK130FG160?**
Always adhere to voltage/current limits to avoid overstress. Use ESD-safe handling during installation. Ensure proper insulation between the module and heatsink to prevent short circuits. Monitor operating temperatures via built-in sensors, and avoid mechanical stress on terminals. Follow manufacturer guidelines for storage (dry, <40°C) to prevent moisture damage. The PK130FG160 balances power, efficiency, and integration, making it a versatile choice for advanced electronic systems.

(Ngwa elektrọnik IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)