bangaren lantarki IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

BayaninThyristor Modules

Na'urorin Thyristor sune mahimman abubuwan haɗin gwiwar fasahar lantarki. Sun ƙunshi thyristors ɗaya ko fiye da aka lulluɓe a cikin ƙaramin gida. Thyristors masu Layer hudu ne, na'urorin semiconductor na tasha uku waɗanda ake amfani da su da farko a aikace-aikacen da ke sarrafawa da daidaita babban ƙarfin AC ko halin yanzu na DC.. Suna iya canzawa da sauri daga babban yanayin rashin ƙarfi zuwa yanayin tafiyar da rashin ƙarfi dangane da siginar faɗakarwa, don haka samun madaidaicin iko na halin yanzu.

Features da AmfaninThyristor Modules

Babban ikon sarrafa iko: Na'urorin Thyristor na iya jure maɗaukakin ƙarfin lantarki da igiyoyi, yin su dace da masana'antu-sa ikon canji da kuma kula da tsarin.

Lokacin amsawa mai sauri: Ƙananan lokutan sauyawa da ƙananan asara suna tabbatar da ingantaccen aiki.

Amincewa da karko: Kyawawan ƙira, barga aiki a cikin matsananci yanayi, da tsawon rai.

Sauƙi haɗin kai: Modular zane yana sauƙaƙe shigarwa kuma yana rage bukatun kulawa.

Kariyar wuce gona da iri: Hanyoyin kariya da aka gina a ciki kamar yawan zafin jiki da kariya ta yau da kullun suna haɓaka amincin tsarin.

M aikace-aikace: An yi amfani da shi sosai cikin aikace-aikace iri-iri masu buƙatar madaidaicin iko na yanzu.

(bangaren lantarki IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 is a high-performance IGBT component created for durable power electronics applications, integrating innovative Shielded Gateway Bipolar Transistor (IGBT) innovation with ultrafast recuperation diodes. It runs at an optimum voltage score of 1600V and a constant enthusiast current of 130A, making it appropriate for high-power systems such as industrial electric motor drives, sabunta makamashi inverters, da tsarin UPS. The component features low saturation voltage (VCE(sat) na 2.2 V typical at 130A) and minimal switching losses, guaranteeing high effectiveness. Its integrated anti-parallel diodes show a reduced ahead voltage drop (VF of 1.6 V normal at 130A) and a fast reverse recovery time (trr ≤ 100ns), improving reliability in freewheeling and snubber circuits. The thyristor/SCR elements within the module support rise present taking care of as much as 800A (mara maimaituwa) and include a gate trigger voltage (VGT) of 3V with a holding existing (IH) of 200mA for stable switching. The MOSFET area uses reduced on-resistance (RDS(kan) ≤ 25mΩ) and high-speed switching capacities (rise/fall times ≤ 50ns). Thermal efficiency is optimized with a reduced thermal resistance (Rth(j-c) ≤ 0.12 ° C/W) and an operating junction temperature variety of -40 ° C ku +150 ° C, suitable with standard heatsink installing. The component’s small, isolated baseplate design ensures very easy setup and durability in rough atmospheres. Certifications include UL recognition and RoHS conformity. Made for scalability, the PK130FG160 is ideal for applications calling for specific control, babban inganci, and lasting reliability in medium- to high-voltage systems. Additional versions in the product family support tailored setups for diodes, thyristors, SCRs, da MOSFETs, tailored to details voltage/current demands.

(bangaren lantarki IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 IGBT module, together with diodes, thyristors, SCRs, transistor, da MOSFETs, works as a keystone in modern power electronic devices, making it possible for reliable energy control throughout varied sectors. The IGBT (Shielded Entrance Bipolar Transistor) component excels in high-power switching applications, integrating the rapid switching of MOSFETs with the high-current handling of bipolar transistors. The PK130FG160, with its robust 130A/1600V ranking, is excellent for commercial electric motor drives, sabunta makamashi inverters (solar/wind), and electrical car (EV) tsarin jan hankali, where high voltage and thermal stability are essential. Diodes, such as freewheeling or rectifier diodes, are integral in transforming air conditioning to DC, safeguarding circuits from voltage spikes, and ensuring smooth current circulation in power supplies, caja baturi, and electric motor controllers. Thyristors and SCRs (Silicon-Controlled Rectifiers) are made use of for accurate air conditioner power control in applications like lights dimmers, heater, and commercial equipment. Their capacity to manage high voltages and currents makes them ideal for phase-angle control in motor speed policy and voltage stablizing. Transistors, consisting of bipolar joint transistors (BJTs), intensify and change signals in low-power circuits, frequently located in audio amplifiers, sensing unit interfaces, and control systems. MOSFETs, with their high-speed changing and reduced on-resistance, dominate in switch-mode power supplies (SMPS), DC-DC masu canzawa, and high-frequency applications like induction home heating and RF amplifiers. The PK130FG160 IGBT component’s innovative thermal administration and low transmission losses improve performance in high-power inverters and UPS systems. A cikin sabunta makamashi tsarin, it makes certain stable power conversion, while in EVs, it maximizes electric motor control and energy recuperation. Together, these elements enable advancements in automation, green power, and wise grid technologies, driving dependability and performance sought after atmospheres. Their harmony in circuits makes sure seamless power conversion, tsaro, da sarrafawa, making them indispensable ahead of time modern-day electronic devices.

Bayanan Kamfanin

Kudin hannun jari Luoyang Datang Energy Tech Co.,Ltd(sales@pddn.com) yana daya daga cikin manyan kamfanoni a fasahar samar da wutar lantarki da kuma samar da wutar lantarki, wanda ke da hannu sosai wajen haɓaka injin inverters na hasken rana， masu aikin wuta, masu sarrafa wutar lantarki, ɗakunan ajiya na rarrabawa, thyristors， kayayyaki， diodes， masu dumama, da sauran na'urorin lantarki ko semiconductors. Za mu himmatu wajen samarwa masu amfani da inganci mai inganci, samfurori masu inganci da sabis na kulawa.

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Jirgin ruwa

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Yanayin Ajiya

1) Ajiye a cikin busasshiyar wuri a zazzabi na ɗaki.

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3) Yi amfani nan da nan bayan buɗe jakar tattarawa na ciki.

5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 IGBT Module integrates advanced power semiconductor technology for high-performance applications. Below are the top FAQs about this component:

**1. What are the primary applications of the PK130FG160 IGBT Module?**
The PK130FG160 is designed for high-power switching in industrial and commercial systems, gami da tukin mota, UPS (samar da wutar lantarki mara katsewa), sabunta makamashi inverters (solar/wind), kayan walda, da tsarin jan hankali. Ƙaƙƙarfan ƙirar sa yana goyan bayan babban ƙarfin lantarki (up to 1600V) da halin yanzu (130A), making it ideal for demanding environments like electric vehicles and industrial automation.

**2. What are the key features of the PK130FG160?**
This module combines an IGBT, freewheeling diode, and thyristor/SCR elements in a single package, reducing system complexity. Key specs include a 1600V blocking voltage, 130A continuous current rating, low saturation voltage (VCE(sat)), and high switching speed. It also features low thermal resistance, built-in temperature monitoring, and short-circuit protection for enhanced reliability.

**3. How does the PK130FG160 handle thermal management?**
The module uses an insulated metal substrate and advanced packaging materials to dissipate heat efficiently. For optimal performance, it must be mounted on a heatsink with thermal grease or pads. Operating temperature ranges from -40°C to 150°C, but consistent cooling is critical to prevent overheating and ensure longevity in high-load scenarios.

**4. What advantages does the PK130FG160 offer over similar modules?**
It delivers superior power density, lower switching losses, and higher efficiency compared to standard IGBT or MOSFET modules. The integrated diode and thyristor components eliminate the need for external anti-parallel diodes, simplifying circuit design. Its rugged construction ensures durability in high-vibration or high-humidity environments.

**5. What safety precautions should be taken when using the PK130FG160?**
Always adhere to voltage/current limits to avoid overstress. Use ESD-safe handling during installation. Ensure proper insulation between the module and heatsink to prevent short circuits. Monitor operating temperatures via built-in sensors, and avoid mechanical stress on terminals. Follow manufacturer guidelines for storage (dry, <40°C) to prevent moisture damage. The PK130FG160 balances power, efficiency, and integration, making it a versatile choice for advanced electronic systems.

(bangaren lantarki IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)