electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

Visión xeral deMódulos de tiristores

Os módulos de tiristores son compoñentes clave na tecnoloxía electrónica de potencia. Están formados por un ou máis tiristores encapsulados nunha carcasa compacta. Os tiristores son de catro capas, dispositivos semicondutores de tres terminais que se usan principalmente en aplicacións que controlan e regulan a corrente alterna ou continua de alta potencia.. Poden cambiar rapidamente dun estado de alta impedancia a un estado de condución de baixa impedancia baseado nun sinal de disparo, conseguindo así un control preciso da corrente.

Características e vantaxes deMódulos de tiristores

Capacidade de manexo de alta potencia: Os módulos de tiristores poden soportar tensións e correntes extremadamente altas, facéndoos axeitados para sistemas de conversión e control de enerxía de grao industrial.

Tempo de resposta rápido: Os tempos de conmutación moi curtos e as baixas perdas garanten un funcionamento de alta eficiencia.

Fiabilidade e durabilidade: Deseño robusto, operación estable en ambientes duros, e longa vida.

Fácil integración: O deseño modular simplifica a instalación e reduce os requisitos de mantemento.

Protección contra sobrecarga: Os mecanismos de protección integrados, como a protección contra sobretemperatura e sobreintensidade de corrente, melloran a seguridade do sistema.

Aplicacións versátiles: Amplamente utilizado nunha variedade de aplicacións que requiren un control preciso da corrente.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 is a high-performance IGBT component designed for durable power electronic devices applications, integrating sophisticated diode, tiristor (SCR), and MOSFET innovations. This component incorporates effectiveness, integrity, and thermal stability, making it ideal for inverters, accionamentos de motores eléctricos, commercial automation, and renewable resource systems. Below are its vital specs:

** Voltage & Current Scores **: The IGBT component runs at a maximum collector-emitter voltage (V_CES) of 1300V and a constant collector present (I_C) of 160A, with a peak current handling capacity of as much as 320A. The incorporated fast-recovery diode sustains a reverse voltage (V_RRM) of 1300V and a forward present (I_F) of 160A, ensuring minimal losses throughout switching.

** Switching over Efficiency **: The IGBT features reduced saturation voltage (V_CE(sat)) de 2.1 V at 160A, boosting power effectiveness. The diode exhibits a reverse healing time (t_rr) of 100ns, decreasing switching losses. The thyristor/SCR section provides a locking current of 500mA and a holding current of 100mA, fit for high-power control applications.

** Xestión Térmica **: With a reduced thermal resistance (R_th(j-c)) de 0.12 °C/O, the module effectively dissipates warmth, sustaining operation at junction temperatures up to 150 °C. Its protected baseplate style makes certain safe installing on heatsinks.

** Isolation & Security **: The module provides an enhanced isolation voltage of 2500V (RMS) in between terminals and the baseplate. Built-in temperature level tracking and short-circuit security enhance system security.

** Plan & Conformity **: Housed in a compact, industry-standard module package, the PK130FG160 fulfills RoHS and UL certifications. Its screw-terminal layout guarantees secure links in high-vibration settings.

** Applications **: Appropriate for AC/DC motor drives, UPS systems, equipos de soldadura, and solar inverters. Suitable with MOSFET and transistor-based circuits for hybrid configurations.

This module equilibriums high power thickness with durability, dealing with requiring atmospheres while keeping precision control over voltage and existing specifications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 is a high-performance IGBT (Shielded Gate Bipolar Transistor) module created for demanding power electronics applications. Combining the advantages of IGBTs, díodos, tiristores, SCR (Silicon-Controlled Rectifiers), and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), this component acts as a versatile solution for efficient power changing and control. Its durable design enables high-voltage and high-current procedure, making it optimal for industrial, automoción, e sistemas de enerxías renovables.

In industrial electric motor drives, the PK130FG160 IGBT component succeeds by making it possible for specific rate and torque control in air conditioning motors. Its quick switching capacity minimizes power loss, boosting effectiveness in applications like conveyor systems, bombas, and CNC equipment. The integrated diode and thyristor components guarantee reliable reverse voltage protection and rise handling, essential for maintaining system stability under changing tons.

For renewable resource systems, such as solar inverters and wind turbine converters, the PK130FG160 plays an essential role in transforming DC power to grid-compatible air conditioner power. The SCR and MOSFET components within the module enhance its ability to take care of high-frequency switching, reducing warmth generation and lengthening element life-span. Its rugged building ensures resilience in extreme environmental problems, a key need for outside energy installations.

In electrical lorries (EVs) and crossbreed electric cars (HEVs), this module sustains traction inverters and onboard battery chargers. The IGBT and diode mix makes it possible for efficient power conversion in between the battery and motor, while the thyristor aids in overcurrent security throughout fast acceleration or regenerative braking. In addition, its portable style straightens with the space constraints of modern automobile systems.

The PK130FG160 additionally finds usage in welding equipment, uninterruptible power materials (UPS), and induction heating systems. Its SCR and MOSFET elements allow specific control of high-power results, ensuring consistent efficiency in critical applications. With a concentrate on thermal monitoring and reduced transmission losses, this module provides integrity and performance throughout diverse markets, cementing its function as a cornerstone of advanced power electronics options.

Perfil da empresa

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) é unha das empresas líderes en tecnoloxía de electrónica de potencia e produtos de enerxía, que participa plenamente no desenvolvemento de inversores solares， transformadores, reguladores de tensión, armarios de distribución, tiristores， módulos， díodos， quentadores, e outros dispositivos electrónicos ou semicondutores. Comprometémonos a ofrecer aos usuarios unha alta calidade, produtos eficientes e servizo atento.

Acepta pago con tarxeta de crédito, T/T, Unión Oeste, e Paypal. PDDN enviará os produtos aos clientes no exterior a través de FedEx, DHL, polo mar, ou por vía aérea. If you want high-quality electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160, por favor, envíenos consultas; estaremos aquí para axudarche.

Métodos de pago

L/C, T/T, Western Union, Paypal, Tarxeta de crédito, etc.

Envío

Por mar, polo aire, por expreso, como solicitan os clientes.

Condicións de almacenamento

1) Almacenar nun ambiente seco a temperatura ambiente.

2) Evite a humidade e a alta temperatura.

3) Use inmediatamente despois de abrir a bolsa de embalaxe interior.

5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 is a high-power IGBT module integrating diodes and thyristor (SCR) components, designed for robust performance in demanding applications. Here are five common FAQs with direct answers:

**1. What is the PK130FG160 IGBT module used for?**
The PK130FG160 is optimized for high-voltage, high-current switching in industrial systems like motor drives, renewable energy inverters, UPS systems, e equipos de soldadura. Its integration of IGBTs, díodos, and SCRs ensures efficient power control, rectification, and surge protection in circuits requiring precision and reliability.

**2. What are the key specifications of the PK130FG160?**
This module typically supports voltage ratings up to 1600V and current ratings around 130A, with low saturation voltage for reduced power loss. It includes anti-parallel diodes for freewheeling and SCR-based protection against overvoltage, ensuring durability in high-stress environments. Thermal resistance is minimized for stable operation up to 150°C.

**3. How does the PK130FG160 compare to MOSFETs or standard thyristors?**
Unlike MOSFETs, which excel in high-frequency, low-voltage applications, the PK130FG160 handles higher voltages and currents with moderate switching speeds. Compared to standalone thyristors (SCR), it offers integrated control, combining switching and protection features in one module, reducing external component requirements.

**4. What thermal management is required for this module?**
Efficient heat dissipation is critical. Use a thermally conductive grease and mount the module on a heatsink with adequate airflow or liquid cooling. Ensure junction temperatures stay within the specified -40°C to 150°C range to prevent overheating and prolong lifespan.

**5. What safety precautions should be taken during installation?**
Avoid static discharge by grounding tools and personnel. Ensure correct polarity and insulation to prevent short circuits. Follow torque specifications when securing terminals to avoid mechanical stress. Test the module under low power before full operation to validate wiring and thermal management.

The PK130FG160 balances power handling, integration, e fiabilidade, making it ideal for heavy-duty industrial applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)