ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H

Ülevaade kõrgsagedustüristoritest

Kõrgsagedustüristorid on spetsiaalsed pooljuhtseadmed, mis on loodud töötama kõrgematel sagedustel kui tavalised türistorid. Neid kasutatakse rakendustes, mis nõuavad kiiret ümberlülitamist, nagu kõrgsagedusküte, mootori juhtimine, ja toiteallikad. Need seadmed saavad hakkama märkimisväärse elektrienergiaga, pakkudes samal ajal tõhusat ja usaldusväärset lülitusjõudlust sagedustel, mis ületavad standardsete türistorite tüüpilist töövahemikku..

Kõrgsagedustüristori omadused

Suur lülituskiirus: Võimalik töötada palju kõrgematel sagedustel võrreldes traditsiooniliste türistoritega, muutes need sobivaks kiirelt vahetatavateks rakendusteks.

Tõhus võimsuse käsitsemine: Kavandatud olulise elektrienergia haldamiseks minimaalsete kadudega lülitustoimingute ajal.

Madal värava päästiku vool: Lülitustoimingu käivitamiseks on vaja vähem voolu, tõhususe suurendamine ja soojuse tootmise vähendamine.

Vastupidav konstruktsioon: Ehitatud taluma karmi keskkonda ja termilist stressi, tagades usaldusväärse töö aja jooksul.

Kompaktne suurus: Pakkuge madalama sagedusega analoogidega võrreldes väiksemat jalajälge, mis on kasulik kompaktsete kujunduste jaoks.

Täiustatud dv/dt võimekus: Täiustatud võime tulla toime kiirete pingemuutustega ilma vale sisselülitamiseta, aidates kaasa stabiilsemale toimimisele.

Vähendatud EMI: Optimeeritud disaini tõttu väiksem elektromagnetiline häire, mis on tundlike rakenduste jaoks ülioluline.

Mitmekülgsed rakendused: Sobib paljudele tööstusharudele, sealhulgas autotööstusele, tööstusautomaatika, telekommunikatsioon, ja taastuvenergia süsteemid.

(ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H)

Specification of ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H

The ICZX MRFX1K80H is a high-frequency RF power transistor created for high-performance applications requiring robust power boosting throughout a wide frequency range. This LDMOS-based transistor delivers remarkable performance, power gain, and dependability, making it excellent for industrial, scientific, clinical (ISM), broadcast, and aerospace systems. The MRFX1K80H operates in the regularity range of 1.8 MHz to 1.8 GHz, offering adaptability for both narrowband and wideband signals. It sustains continuous-wave (CW) and pulsed operations, with a normal result power of 1800 W (1.8 kW) at 1.8 GHz under 50 V supply voltage. The device accomplishes a power gain of 18 dB minimum at 1.8 GHz, ensuring strong signal amplification with marginal input drive demands. Its high drain performance, typically surpassing 70%, lowers thermal dissipation and boosts system longevity. The transistor features a low thermal resistance of 0.2 ° C/W, enabling effective heat monitoring also under high-power problems. It is housed in a rugged, air-cavity ceramic plan with a flange-style installing for optimal thermal and RF performance. The MRFX1K80H includes incorporated ESD defense and under extreme load inequalities (VSWR 10:1). Secret requirements include a drain-source voltage (VDS) kohta 65 V, a continuous drainpipe existing (ID) kohta 40 A, and a peak pulse current of 80 A. Input and output resistances are matched to 50 Ω, streamlining combination into RF circuits. Storage space and operating temperature ranges cover -65 ° C kuni +150 ° C ja -40 ° C kuni +110 °C, specifically, making sure dependability in severe settings. Certified with RoHS and REACH standards, this transistor is lead-free and halogen-free. It is evaluated under strict quality assurance, with a mean time between failures (MTBF) going beyond 1 million hours. The MRFX1K80H is compatible with automated assembly processes and consists of advised placing torque specifications for protected installation. Applications consist of RF plasma generators, radar systems, FM/DAB broadcast transmitters, and bit accelerators. Its rugged design, high power thickness, and effectiveness make it a top option for designers seeking dependable RF boosting popular circumstances.

(ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H)

Applications of ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H

The ICZX MRFX1K80H High Regularity RF Power Transistor (MRFX1K80H/MRFX 1K80H) is an advanced LDMOS-based transistor created for high-power RF applications throughout a wide frequency spectrum. With a durable output power ability of up to 1.8 kW and optimized performance in the HF to 600 MHz range, this transistor is engineered to supply extraordinary efficiency, thermal security, and linearity in demanding settings. Its advanced style makes certain integrity in continuous and pulsed procedures, making it a versatile solution for markets needing high-frequency boosting.

** Broadcast Transmitters: ** The MRFX1K80H is ideal for FM radio, VHF/UHF tv, and digital broadcasting systems. Its high power result and exceptional linearity make sure clear signal transmission, decreasing distortion for both analog and electronic styles like DVB-T and ATSC.

** Radar Equipments: ** This transistor is widely utilized in armed forces, air traffic control, and weather radar systems. Its capability to take care of high-power pulsed signals enhances target detection precision and array, even in extreme functional problems.

** Industrial RF Heating: ** In applications such as plasma generation, RF welding, and induction heating, the MRFX1K80H gives consistent power distribution for industrial processes. Its sturdy construction makes sure resilience in high-duty-cycle settings.

** Medical Equipment: ** The transistor sustains clinical innovations like RF ablation and diathermy, where precision and security are vital. It allows regulated power distribution for restorative and analysis treatments.

** Communication Equipments: ** Amateur radio, satellite interactions, and walkie-talkie systems take advantage of the transistor’s high gain and performance. It ensures reliable signal amplification in HF, VHF, and UHF bands, also in mobile or base terminal configurations.

** Plasma Generation: ** Used in semiconductor production and scientific research, the MRFX1K80H drives RF energy for plasma production in etching, deposition, and cleansing processes, providing repeatable performance.

Trick benefits include low thermal resistance, integrated ESD security, and compatibility with impedance-matching networks. These functions decrease system intricacy and boost durability. The MRFX1K80H’s flexibility across markets highlights its function as a crucial part in modern RF power amplification, combining innovative efficiency with functional resilience. Whether for industrial, industrial, or protection applications, this transistor supplies the power and dependability needed to fulfill progressing technological needs.

Ettevõtte profiil

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) on üks juhtivaid jõuelektroonika tehnoloogia ja energiatoodete ettevõtteid, mis on täielikult kaasatud päikeseenergia inverterite väljatöötamisse， trafod, pinge regulaatorid, jaotuskapid, türistorid， moodulid， dioodid， küttekehad, ja muud elektroonilised seadmed või pooljuhid. Oleme pühendunud kasutajatele kvaliteetse pakkumise pakkumisele, tõhusad tooted ja tähelepanelik teenindus.

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Makseviisid

L/C, T/T, Western Union, Paypal, Krediitkaart jne.

Saadetis

Merega, õhuga, ekspressi teel, vastavalt klientide soovile.

Säilitamistingimused

1) Hoida kuivas keskkonnas toatemperatuuril.

2) Vältige niisket ja kõrget temperatuuri.

3) Kasutage kohe pärast sisemise pakkekoti avamist.

5 FAQs of ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H

What is the power output and frequency range of the MRFX1K80H transistor? The MRFX1K80H is designed for high-power RF applications, delivering up to 1800W peak envelope power (PEP) under pulsed operation. It operates efficiently across a broad frequency range of 1.8 MHz to 600 MHz, making it suitable for both HF and VHF/UHF bands. The transistor supports high gain and efficiency, typically above 70%, and is optimized for use in Class AB or push-pull configurations for stable performance.

What are the primary applications of the MRFX1K80H? This transistor is ideal for high-frequency RF amplification in commercial, industrial, and military systems. Common uses include broadcast transmitters, RF plasma generators, amateur radio amplifiers, and radar systems. Its rugged design and high-power capabilities make it suitable for demanding environments such as aerospace, medical equipment, and industrial heating, where reliability and efficiency are critical.

How is thermal management handled for the MRFX1K80H? The MRFX1K80H requires robust thermal management due to its high power dissipation. It features a low thermal resistance of 0.15°C/W (junction-to-case) and must be mounted on a heatsink with forced air or liquid cooling. The maximum junction temperature is 200°C, but optimal performance is achieved when kept below 150°C. Proper mounting torque and thermal interface materials are essential to prevent overheating and ensure longevity.

What input/output impedance does the MRFX1K80H support? The transistor is designed for 50-ohm impedance systems, which is standard in most RF applications. Input and output matching networks are required to optimize power transfer and minimize reflections. Internal pre-matching networks simplify integration, but external tuning may be necessary for specific frequency bands or power levels to achieve maximum efficiency and linearity.

What is the reliability and lifespan of the MRFX1K80H? With an MTBF (Mean Time Between Failures) exceeding 1 million hours under proper operating conditions, the MRFX1K80H is built for long-term reliability. Its gallium nitride (GaN) on silicon carbide (SiC) technology ensures durability in high-voltage, high-temperature environments. Lifespan depends on adherence to voltage, praegune, and thermal limits, as well as correct circuit design and installation practices.

(ICZX MRFX1K80H High Frequency Rf Power Transistors MRFX 1K80H MRFX1K80H)