electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

Superrigardo deTiristoraj Moduloj

Tiristormoduloj estas ŝlosilaj komponentoj en potenca elektronika teknologio. Ili konsistas el unu aŭ pluraj tiristoroj enkapsuligitaj en kompakta loĝejo. Tiristoroj estas kvartavolaj, tri-finaj duonkonduktaĵoj kiuj estas ĉefe uzitaj en aplikoj kiuj kontrolas kaj reguligas alt-potencan AC aŭ DC-fluon. Ili povas rapide ŝanĝi de alt-impedanca stato al malalt-impedanca kondukta stato bazita sur ellasilsignalo, tiel atingante precizan kontrolon de fluo.

Trajtoj kaj Avantaĝoj deTiristoraj Moduloj

Alta potenco pritraktanta kapablon: Tiristormoduloj povas elteni ekstreme altajn tensiojn kaj fluojn, igante ilin taŭgaj por industria-grada potenca konvertiĝo kaj kontrolsistemoj.

Rapida responda tempo: Tre mallongaj ŝanĝaj tempoj kaj malaltaj perdoj certigas alt-efikecan operacion.

Fidindeco kaj fortikeco: Fortika dezajno, stabila operacio en severaj medioj, kaj longa vivo.

Facila integriĝo: Modula dezajno simpligas instaladon kaj reduktas funkciservajn postulojn.

Superŝarĝa protekto: Enkonstruitaj protektaj mekanismoj kiel tro-temperaturo kaj tro-kurenta protekto plibonigas sisteman sekurecon.

Versatilaj aplikoj: Vaste uzata en diversaj aplikoj postulantaj precizan nunan kontrolon.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 is a high-performance IGBT component created for durable power electronics applications, integrating innovative Shielded Gateway Bipolar Transistor (IGBT) innovation with ultrafast recuperation diodes. It runs at an optimum voltage score of 1600V and a constant enthusiast current of 130A, making it appropriate for high-power systems such as industrial electric motor drives, renoviĝantaj energio-invetiloj, kaj UPS-sistemoj. The component features low saturation voltage (VCE(sat) de 2.2 V typical at 130A) and minimal switching losses, guaranteeing high effectiveness. Its integrated anti-parallel diodes show a reduced ahead voltage drop (VF of 1.6 V normal at 130A) and a fast reverse recovery time (trr ≤ 100ns), improving reliability in freewheeling and snubber circuits. The thyristor/SCR elements within the module support rise present taking care of as much as 800A (ne-ripeta) and include a gate trigger voltage (VGT) of 3V with a holding existing (IH) of 200mA for stable switching. The MOSFET area uses reduced on-resistance (RDS(on) ≤ 25mΩ) and high-speed switching capacities (rise/fall times ≤ 50ns). Thermal efficiency is optimized with a reduced thermal resistance (Rth(j-c) ≤ 0.12 ° C/O) and an operating junction temperature variety of -40 °C al +150 °C, suitable with standard heatsink installing. The component’s small, isolated baseplate design ensures very easy setup and durability in rough atmospheres. Certifications include UL recognition and RoHS conformity. Made for scalability, the PK130FG160 is ideal for applications calling for specific control, alta efikeco, and lasting reliability in medium- to high-voltage systems. Additional versions in the product family support tailored setups for diodes, tiristoroj, SCRoj, and MOSFETs, tailored to details voltage/current demands.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 IGBT module, together with diodes, tiristoroj, SCRoj, transistors, and MOSFETs, works as a keystone in modern power electronic devices, making it possible for reliable energy control throughout varied sectors. The IGBT (Shielded Entrance Bipolar Transistor) component excels in high-power switching applications, integrating the rapid switching of MOSFETs with the high-current handling of bipolar transistors. The PK130FG160, with its robust 130A/1600V ranking, is excellent for commercial electric motor drives, renoviĝantaj energio-invetiloj (solar/wind), and electrical car (EV) traction systems, where high voltage and thermal stability are essential. Diodes, such as freewheeling or rectifier diodes, are integral in transforming air conditioning to DC, safeguarding circuits from voltage spikes, and ensuring smooth current circulation in power supplies, kuirilaroj, and electric motor controllers. Thyristors and SCRs (Silicon-Controlled Rectifiers) are made use of for accurate air conditioner power control in applications like lights dimmers, heater, kaj komerca ekipaĵo. Their capacity to manage high voltages and currents makes them ideal for phase-angle control in motor speed policy and voltage stablizing. Transistors, consisting of bipolar joint transistors (BJTs), intensify and change signals in low-power circuits, frequently located in audio amplifiers, sensing unit interfaces, and control systems. MOSFETs, with their high-speed changing and reduced on-resistance, dominate in switch-mode power supplies (SMPS), DC-DC konvertiloj, and high-frequency applications like induction home heating and RF amplifiers. The PK130FG160 IGBT component’s innovative thermal administration and low transmission losses improve performance in high-power inverters and UPS systems. En sistemoj de renovigeblaj energioj, it makes certain stable power conversion, while in EVs, it maximizes electric motor control and energy recuperation. Together, these elements enable advancements in automation, green power, and wise grid technologies, driving dependability and performance sought after atmospheres. Their harmony in circuits makes sure seamless power conversion, defense, and control, making them indispensable ahead of time modern-day electronic devices.

Kompanio Profilo

Luoyang Datang Energy Tech Co.Ltd(sales@pddn.com) estas unu el la ĉefaj entreprenoj en elektronika teknologio kaj potencaj produktoj, kiu estas plene implikita en evoluigado de sunaj invetiloj， transformiloj, reguligiloj de tensio, distribuaj kabinetoj, tiristoroj， moduloj， diodoj， hejtiloj, kaj aliaj elektronikaj aparatoj aŭ duonkonduktaĵoj. Ni devontiĝos provizi uzantojn per altkvalita, efikaj produktoj kaj zorgema servo.

Ĝi akceptas pagon per Kreditkarto, T/T, Okcidenta Unio, kaj Paypal. PDDN sendos la varojn al klientoj eksterlande per FedEx, DHL, per maro, aŭ per aero. If you want high-quality electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160, bonvolu sendi al ni demandojn; ni estos ĉi tie por helpi vin.

Pag-Metodoj

L/C, T/T, Okcidenta Unio, Paypal, Kreditkarto ktp.

Sendo

Ĉe la maro, per aero, per ekspreso, kiel klientoj petas.

Kondiĉoj de Stokado

1) Konservu en seka medio ĉe ĉambra temperaturo.

2) Evitu malsekan kaj altan temperaturon.

3) Uzu tuj post malfermi la internan pakan sakon.

5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160

The PK130FG160 IGBT Module integrates advanced power semiconductor technology for high-performance applications. Below are the top FAQs about this component:

**1. What are the primary applications of the PK130FG160 IGBT Module?**
The PK130FG160 is designed for high-power switching in industrial and commercial systems, inkluzive de motormotoroj, UPS (seninterrompaj elektroprovizoj), renoviĝantaj energio-invetiloj (solar/wind), velda ekipaĵo, and traction systems. Its robust design supports high voltage (up to 1600V) and current (130A), making it ideal for demanding environments like electric vehicles and industrial automation.

**2. What are the key features of the PK130FG160?**
Ĉi tiu modulo kombinas IGBT, freewheeling diode, and thyristor/SCR elements in a single package, reducing system complexity. Key specs include a 1600V blocking voltage, 130A continuous current rating, low saturation voltage (VCE(sat)), and high switching speed. It also features low thermal resistance, built-in temperature monitoring, and short-circuit protection for enhanced reliability.

**3. How does the PK130FG160 handle thermal management?**
The module uses an insulated metal substrate and advanced packaging materials to dissipate heat efficiently. For optimal performance, it must be mounted on a heatsink with thermal grease or pads. Operating temperature ranges from -40°C to 150°C, but consistent cooling is critical to prevent overheating and ensure longevity in high-load scenarios.

**4. What advantages does the PK130FG160 offer over similar modules?**
It delivers superior power density, lower switching losses, and higher efficiency compared to standard IGBT or MOSFET modules. The integrated diode and thyristor components eliminate the need for external anti-parallel diodes, simplifying circuit design. Its rugged construction ensures durability in high-vibration or high-humidity environments.

**5. What safety precautions should be taken when using the PK130FG160?**
Always adhere to voltage/current limits to avoid overstress. Use ESD-safe handling during installation. Ensure proper insulation between the module and heatsink to prevent short circuits. Monitor operating temperatures via built-in sensors, and avoid mechanical stress on terminals. Follow manufacturer guidelines for storage (dry, <40°C) to prevent moisture damage. The PK130FG160 balances power, efficiency, and integration, making it a versatile choice for advanced electronic systems.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet PK130FG160)