FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

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Description

Overview of Fast Recovery Diodes

Fast Recovery Diodes (FRDs) are specialized semiconductor diodes designed to switch rapidly between conducting and non-conducting states. They are particularly useful in high-frequency applications where traditional diodes may not perform adequately due to slower recovery times. FRDs minimize the time it takes for the diode to transition from forward conduction to reverse blocking, reducing switching losses and improving system efficiency. These diodes find widespread use in power supplies, motor drives, inverters, and other power electronics applications.

Features of Fast Recovery Diodes

Rapid Switching: Characterized by a short reverse recovery time, which is crucial for minimizing switching losses in high-frequency circuits.
Low Forward Voltage Drop: Ensures higher efficiency by reducing power loss during forward conduction.
High Surge Current Capability: Can handle brief periods of excessive current without damage, making them robust in real-world conditions.
Temperature Stability: Maintains performance across a wide temperature range, ensuring reliable operation in diverse environments.
Reverse Recovery Charge (Qrr): Lower Qrr values contribute to faster switching and reduced energy dissipation.
Soft Recovery Characteristics: Minimizes electromagnetic interference (EMI) caused by rapid changes in current.
Variety of Packages: Available in multiple package types to fit various design needs and space constraints.
High Reverse Blocking Voltage: Capable of withstanding high voltages in the off-state, suitable for a range of voltage requirements.

FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

(FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor)

Specification of FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

The FFSH10120ADN TO-247-3 is a high-performance Silicon Carbide (SiC) Schottky diode created for power electronics applications. It runs at 1200V with a continuous onward existing ranking of 10A. The tool uses sophisticated SiC technology, allowing fast switching rates and low power losses. This makes it suitable for high-frequency circuits like switch-mode power materials, solar inverters, and electrical vehicle billing systems.

The diode includes a low onward voltage decrease, lowering warmth generation during operation. Its quick recovery attributes decrease switching losses, improving total system performance. The TO-247-3 bundle makes certain durable thermal efficiency, enabling the device to take care of high temperatures without degradation. This style sustains reputable operation popular environments.

With a reverse healing time significantly shorter than conventional silicon diodes, the FFSH10120ADN lowers energy waste in circuits. The SiC material provides superior thermal conductivity, making it possible for reliable warm dissipation. The device preserves stable efficiency throughout a wide temperature level range, from -55 ° C to 175 ° C. It fulfills market standards for voltage and existing ratings, ensuring compatibility with existing power modules.

The Schottky obstacle framework eliminates minority service provider storage space charges, even more improving changing speed. This diode is optimal for applications needing high effectiveness and very little electro-magnetic interference. Its high surge existing capacity sustains transient overload problems without failing. The reverse leakage current continues to be reduced also at raised temperature levels, preventing unneeded power loss.

The FFSH10120ADN is made with strict quality assurance to ensure dependability and durability. It is RoHS-compliant and devoid of harmful substances. The tool is suitable for both industrial and consumer electronic devices, consisting of electric motor drives, uninterruptible power materials, and renewable energy systems.

Each unit undergoes rigorous screening to ensure constant electrical specifications. The TO-247-3 bundle includes 3 pins for very easy installing on heatsinks or PCBs. The diode’s mechanical layout lessens parasitical inductance, maximizing high-frequency performance. Its building and construction prevents wetness absorption, enhancing longevity in damp conditions.

This SiC Schottky rectifier supplies a cost-effective solution for updating conventional silicon-based systems. It reduces cooling demands and prolongs the lifespan of power electronic devices. Designers benefit from streamlined thermal management and improved power performance in their layouts. The FFSH10120ADN is readily available in bulk product packaging, suitable for automatic setting up processes.

The product is backed by a service warranty and technological assistance from the manufacturer. It is widely used in next-generation power conversion systems needing high voltage and quick switching.

FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

(FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor)

Applications of FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

The FFSH10120ADN TO-247-3 is a high-performance Silicon Carbide (SiC) Schottky diode developed for requiring power electronics. It deals with 10A of continual existing and sustains voltages as much as 1200V. The SiC material makes sure fast changing and low energy loss. This makes it optimal for systems requiring performance and reliability.

This diode includes an ultra-low reverse recuperation time. This lowers changing losses in high-frequency circuits. It runs properly at high temperatures. This stability suits commercial atmospheres where heat management is crucial. The TO-247-3 package supplies solid thermal performance. It allows simple combination right into existing styles.

Applications include electric car (EV) chargers and onboard power systems. The diode’s rapid recovery boosts power conversion in motor drives. Solar inverters gain from its high voltage resistance. It takes full advantage of power harvest in renewable resource setups. Commercial power materials utilize it to decrease heat generation. This extends part lifespan.

Telecommunications facilities and information facilities rely upon its performance. Server power systems accomplish higher thickness with minimal air conditioning. The diode’s longevity supports continual operation. Clinical equipment manufacturers utilize it for precision power control. Its reliability fulfills rigorous safety and security standards.

The FFSH10120ADN is initial and examined for top quality. It changes older silicon diodes in modern-day upgrades. Engineers choose it for projects needing small, high-power solutions. Its efficiency in high-stress problems ensures long-term capability.

Trick specifications include an onward voltage decrease of 1.5 V at 10A. Leakage current stays below 1mA at optimum voltage. The operating temperature level array covers -55 ° C to 175 ° C. Storage space problems match commercial demands.

This diode suits electric vehicles, renewable resource systems, and commercial machinery. It works in switch-mode power products and UPS units. Motor drives and welding equipment take advantage of its rapid switching. The design minimizes electro-magnetic disturbance. This compatibility meets international regulatory requirements.

Customers report improved effectiveness in power conversion stages. The tough construction resists resonance and thermal biking. Upkeep expenses go down due to prolonged solution periods.

Company Profile

PDDN Photoelectron Technology Co., Ltd.(sales@pddn.com) is one of the leading enterprises in power electronics technology and power products, which is fully involved in developing solar inverters, transformers, voltage regulators, distribution cabinets, thyristors, modules, diodes, heaters, and other electronic devices or semiconductors. We will be committed to providing users with high-quality, efficient products and considerate service.

It accepts payment via Credit Card, T/T, West Union, and Paypal. PDDN will ship the goods to customers overseas through FedEx, DHL, by sea, or by air. If you want high-quality FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor, please send us inquiries; we will be here to help you.


Payment Methods

L/C, T/T, Western Union, Paypal, Credit Card etc.


Shipment

By sea, by air, by express, as customers request.


Storage Conditions

1) Store in a dry environment at room temperature.

2) Avoid damp and high temperature.

3) Use immediately after opening the inner packing bag.

5 FAQs of FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

The FFSH10120ADN TO-247-3 is a 10A 1200V Silicon Carbide Schottky diode. It is designed for high-efficiency power conversion. Below are answers to common questions.

What is this diode used for?
This diode handles high-voltage, high-frequency circuits. It works in power supplies, solar inverters, EV chargers. It reduces energy loss. It improves system reliability.

Why choose Silicon Carbide (SiC) over standard silicon diodes?
SiC materials perform better. They switch faster. They handle higher temperatures. They lower reverse recovery losses. This diode operates efficiently in harsh conditions.

What are the key electrical specs?
The diode has a 1200V reverse voltage. It supports 10A average forward current. It has a low forward voltage drop. It minimizes heat generation. The reverse recovery time is ultra-fast.

How to manage heat with this diode?
The TO-247-3 package aids heat dissipation. Use a heatsink. Ensure proper mounting. Thermal paste improves contact. Monitor temperature during operation.

How to confirm the product is genuine?
Buy from authorized distributors. Check original packaging. Verify part number markings. Test electrical parameters. Counterfeit parts risk performance failure.

FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor

(FFSH10120ADN TO-247-3 10A 1200V Silicon Carbide SiC Fast Recovery Diode Schottky Rectifier New Original Transistor)

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